Six data shifts that will shape enterprise AI in 2026

In 2026, contextual memory will no longer be a novel technique; it will become table stakes for many operational agentic AI ...
IEEE

A Multi-WL Approach to Suppress Gate-Induced Drain Leakage, Floating Body Effect, and Row Hammer Effect in Array Transistor of 4F2 DRAM and 3D Stackable DRAM

Abstract: Targeting the next-generation 4F2 DRAM and 3D stackable DRAM, we propose a multi-wordline (preferably 2-wordline) array transistor for 1T1C DRAM to efficiently minimize gate-induced drain ...