EDN

600-V MOSFETs pack fast recovery diode

Two 600-V N-channel super-junction MOSFETs from Alpha & Omega incorporate a body diode for robustness and fast reverse recovery. Based on the company’s aMOS5 technology, the AOK095A60FD (TO-247) and ...
Seeking Alpha

ROHM’s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF ...

Santa Clara, CA and Kyoto, Japan, Feb. 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new 100V breakdown Schottky Barrier Diodes (SBDs) that deliver industry-leading[1] reverse ...
Electronic Design

Infineon Introduces First GaN Power FET to Integrate Schottky Diode

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...
EDN

600V GaAs Schottky Diodes for High Power Density PFC Applications

A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs ...
Semiconductor Engineering

On The Reverse Breakdown Behavior Of GaAs PIN Diodes For High Power Applications

In the field of power electronics, the compound semiconductors gallium nitride and silicon carbide are dominating the market. Due to its beneficial properties, gallium arsenide is gaining more and ...