TOKYO, Dec 10, 2020 - (JCN Newswire) - - Silicon carbide epitaxial wafers (SiC epi-wafers), the main material for power semiconductors, with a diameter of six inches (150mm) and manufactured by Showa ...

SemiQ’s SOT-227 SiC power modules, which are tested beyond 1,400 V, target battery chargers, photovoltaic inverters, server ...

The 300mm silicon carbide wafer targets higher production capacity for power electronics and advanced system integration.

V SiC power modules includes a 608-A half-bridge module with 2.4-mΩ on-resistance and best-in-class thermal resistance.

Santa Clara, CA and Kyoto, Japan, April 24, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for ...

As global energy demand surges—driven by AI-hungry data centers, advanced manufacturing, and electrified ...

Wolfspeed’s 300mm platform will unify high-volume silicon carbide manufacturing for power electronics with advanced ...

Six 2300-V baseplate-less power modules from Wolfspeed boost energy efficiency in renewable energy, energy storage, and fast charging applications. These half-bridge modules, optimized for 1500-V DC ...

SemiQ expands its 1200-V Gen3 SiC MOSFET family with SOT-227 modules offering on-resistance values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. GCMS models are co-packaged with a Schottky barrier diode (SBD), while ...

Innovative 2300V modules utilize 200mm silicon carbide technology to deliver energy efficiency for various applications, including renewable energy, energy storage, and high-capacity fast-charging ...

Wolfspeed holds a key SiC position with OEM ties and IP, priced at ~8x sales as a 200mm ramp, utilization, and margins remain ...

Dublin, Dec. 16, 2025 (GLOBE NEWSWIRE) -- The "The Global Power Electronics Market 2026-2036" has been added to ResearchAndMarkets.com's offering. Power electronics is no longer confined to specialist ...