The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...

Washington, D.C. &#151 Intel Corp. faced off against the alliance of Advanced Micro Devices and IBM on the stage of the International Electron Devices Meeting here Tuesday (Dec. 6th), presenting 65-nm ...

For many decades, progress in electronics has been driven by a gradual reduction in the size of silicon transistors (electronic switches). However, this scaling is becoming increasingly difficult and ...

PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate noise ...