Upcoming 14A and 10A process nodes will use high-NA EUV anamorphic scanners, which will require two stitched half-fields to achieve the equivalent wafer exposure area of previous-generation scanners, ...

Three years ago, I wrote a blog entitled “Linking Virtual Wafer Fabrication Modeling with Device-level TCAD Simulation,” in which I described the seamless connection between the SEMulator3D virtual ...