AZoNano

Highly Selective Etching of Silica Over Silicon Nitride and Silicon

Significant ionic and neutral species, including C x F y (X>2), C x HF y, and C x F y (Y/X<2), have been reported by quadrupole mass-spectroscopy in the unique C 5 HF 7 /O 2 /Ar plasma. When compared ...
Semiconductor Engineering

Accelerating Dry Etch Processes During Feature Dependent Etch

In dry etching, the trajectory of accelerated ions is non-uniform and non-vertical, due to collisions with gas molecules and other random thermal effects (figure 1). This has an impact on etch results ...
Nanowerk

New metrology for tuning the etch rate uniformity in plasma etch processes

(Nanowerk News) Imec and KLA Tencor have established a metrology method for optimizing the etch rate uniformity (ERU) in a transformer coupled plasma (TCP) reactor. The proposed metrology method makes ...
Nature

Silicon Nitride Etching in 3D NAND Flash Memory

Silicon nitride (Si3N4) etching is a critical process step in the fabrication of three-dimensional NAND flash memories, where vertically stacked layers demand exceptional process precision. The ...
PR Newswire

SPTS Installs First Vapor HF Release Etch System in China for Shanghai Institute of Microsystem and Information Technology (SIMIT)

SEMICON China 2012 - SPTS Technologies, a supplier of advanced wafer processing solutions for the global semiconductor industry and related markets, today announced that it has commissioned its first ...