SuperGaN-based SiP Family Now Includes Three Devices, Expanding Power Level Support for a Wider Range of Next Generation Adapters and Chargers The new SiPs—WT7162RHUG24B and WT7162RHUG24C—integrate ...
Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), the global leader in robust GaN power semiconductors, and Weltrend Semiconductor Inc. (TWSE: 2436), the global leader in adapter USB ...
Infineon has introduced a new range of integrated 600 V GaN half‑bridge devices to simplify power system design.
Efficient Power Conversion (EPC) provides a forum for engineers to receive product support, ask questions, and share ideas on using GaN technology. EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces ...
ROHM Co., Ltd. (hereinafter "ROHM") has decided to integrate its own development and manufacturing technologies for GaN power devices with the process technology of TSMC, with which ROHM has an ...
UMA/GAN is a system that enables mobile phones to make seamless handovers between a cellular network (such as a GERAN–GSM/EDGE Radio Access network) and an IP access network (such as a wireless LAN) ...
Gallium nitride (GaN) semiconductors can now be grown without ammonia, a toxic chemical that needs a sophisticated detoxifying system before it can be released into the atmosphere. The new technique ...
PLAINVIEW, N.Y., Nov. 05, 2025 (GLOBE NEWSWIRE) -- Veeco Instruments Inc. (VECO) announced today receipt of an order for a Propel®300 system from a major power semiconductor integrated device ...
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